METAL OXIDE SEMICONDUCTOR TECHNOLOGY SCALING ISSUES AND THEIR RELATION TO SUBMICRON LITHOGRAPHYTASCH AF JR.1983; OPTICAL ENGINEERING; ISSN 0091-3286; USA; DA. 1983; VOL. 22; NO 2; PP. 176-180; BIBL. 6 REF.Article

EXPERIMENTAL CHARACTERIZATION OF TRANSFER EFFICIENCY IN CHARGE-COUPLED DEVICES.BRODERSEN RW; BUSS DD; TASCH AF JR et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 2; PP. 40-46; BIBL. 22 REF.Article

CHARGE-COUPLED DEVICE STRUCTURES FOR VLSI MEMORIESCHATTERJEE PK; TAYLOR GW; TASCH AF JR et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 6; PP. 871-881; BIBL. 19 REF.Article

SINGLE CRYSTAL SILICON-ON-OXIDE BY A SCANNING CW LASER INDUCED LATERAL SEEDING PROCESSLAM HW; PINIZZOTTO RF; TASCH AF JR et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 9; PP. 1981-1986; BIBL. 20 REF.Article

CHARACTERISTICS OF MOSFETS FABRICATED IN LASER RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATELAM HW; TASCH AF JR; HOLLOWAY TC et al.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 10; PP. 206-208; BIBL. 3 REF.Article

LEAKAGE STUDIES IN HIGH-DENSITY DYNAMIC MOS MEMORY DEVICESCHATTERJEE PK; TAYLOR GW; TASCH AF JR et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 4; PP. 564-575; BIBL. 14 REF.Article

SILICON-ON-INSULATOR M.O.S.F.E.T.S. FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO₂TASCH AF JR; HOLLOWAY TC; LEE KF et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 14; PP. 435-437; BIBL. 6 REF.Article

ENHANCED CAPACITY CCDCHATTERJEE PK; TASCH AF JR; FU HS et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 12; PP. 1374-1382; BIBL. 6 REF.Article

TECHNOLOGY OF CHARGE-COUPLED DEVICES FOR VIDEO BANDWIDTH REDUCTION.BUSS DD; BRODERSEN RW; HEWES CR et al.1975; IN: EFFICIENT TRANSM. PICT. INF. SEMIN.; SAN DIEGO, CALIF.; 1975; PALOS VERDES ESTATES, CALIF.; S.P.I.E.; DA. 1975; PP. 48-56; BIBL. 22 REF.Conference Paper

DEVIDE FABRICATION IN (100) SILICON-ON-OXIDE PRODUCED BY A SCANNING CW-LASER-INDUCED LATERAL SEEDING TECHNIQUEHON WAI LAM; SOBCZAK ZP; PINIZZOTTO RF et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 3; PP. 389-394; BIBL. 21 REF.Article

A NEW EDGE-DEFINED APPROACH FOR SUBMICROMETER MOSFET FABRICATIONHUNTER WR; HOLLOWAY TC; CHATTERJEE PK et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 1; PP. 4-6; BIBL. 9 REF.Article

LEAKAGE STUDIES IN HIGH-DENSITY DYNAMIC MOS MEMORY DEVICESCHATTERJEE PK; TAYLOR GW; TASCH AF JR et al.1979; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 2; PP. 486-498; BIBL. 14 REF.Article

THE HI-C RAM CELL CONCEPTTASCH AF JR; CHATTERJEE PK; FU HS et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 1; PP. 33-41; BIBL. 22 REF.Article

THE CHARGE-COUPLED RAM CELL CONCEPT.TASCH AF JR; FRYE RC; HORNG SEN FU et al.1976; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 2; PP. 126-131; BIBL. 7 REF.Article

CHARGE CAPACITY ANALYSIS OF THE CHARGE-COUPLED RAM CELL.TASCH AF JR; HORNG SEN FU; HOLLOWAY TC et al.1976; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 5; PP. 575-585; BIBL. 11 REF.Article

COMPOSITE TISI₂/N⁺ POLY-SI LOW-RESISTIVITY GATE ELECTRODE AND INTERCONNECT FOR VLSI DEVICE TECHNOLOGYWANG KL; HOLLOWAY TC; PINIZZOTTO RF et al.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 177-183; BIBL. 8 REF.Article

RING OSCILLATORS FABRICATED IN LASER-ANNEALED SILICON-ON-INSULATORLAM HW; TASCH AF JR; HOLLOWAY TC et al.1980; IEEE ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 6; PP. 99-100; BIBL. 4 REF.Article